Electrical and optical properties of Al-doped ZnO and ZnAl2O4 films prepared by atomic layer deposition

Nanoscale Research Letters

Volumn 8, Issue 1, 2013, Pages 1-8

  Hou, Qiongqiong ^a   Meng, Fanjie ^a   Sun, Jiaming ^a  

^a NANKAI UNIVERSITY   (China)

Author keywords

Aluminum doped zinc oxide; Atomic layer deposition; Photoluminescence; X ray diffraction; Zinc aluminate

Indexed keywords

ALUMINA; ALUMINUM COATINGS; ALUMINUM OXIDE; ATOMS; COMPOSITE FILMS; CONDUCTIVE FILMS; CRYSTALLINITY; FILM PREPARATION; II-VI SEMICONDUCTORS; MULTILAYERS; OPTICAL MULTILAYERS; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; PHOTOLUMINESCENCE SPECTROSCOPY; SEMICONDUCTOR DOPING; SODIUM ALUMINATE; TRANSPARENT CONDUCTING OXIDES; X RAY DIFFRACTION; X RAY POWDER DIFFRACTION; ZINC OXIDE;

AL-DOPED ZNO FILMS; ALUMINUM-DOPED ZINC OXIDE; ELECTRICAL AND OPTICAL PROPERTIES; HIGH-TEMPERATURE ANNEALING; SELECTIVE CRYSTALLIZATION; TRANSPARENT CONDUCTIVE; TRIMETHYLALUMINUM; ZINC ALUMINATE;

ATOMIC LAYER DEPOSITION;

EID: 84876900837     PISSN: 19317573     EISSN: 1556276X     Source Type: Journal    
DOI: 10.1186/1556-276X-8-144     Document Type: Article

References (24)

1. Nomura K, Ohta H, Takagi A, Kamiya T, Hirano M, Hosono H: Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors. Nature 2004, 432:488-492.
2. Chen M, Pei Z, Sun C, Wen L, Wang X: Surface characterization of transparent conductive oxide Al-doped ZnO films. J Cryst Growth 2000, 220:254-262.
3. El-Nabarawy T, Attia A, Alaya M: Effect of thermal treatment on the structural, textural and catalytic properties of the ZnO-Al2O3 system. Mater Lett 1995, 24:319-325.
4. Wrzyszcz J, Zawadzki M, Trawczynski J, Grabowska H, Mista W: Some catalytic properties of hydrothermally synthesised zinc aluminate spinel. Appl Catal Gen 2001, 210:263-269.
5. Lou Z, Hao J: Cathodoluminescent characteristics of green-emitting ZnAl2O4:Mn thin-film phosphors. Appl Phys Mater Sci Process 2005, 80:151-154.
6. 3+: synthesis and photoluminescence. Nanotechnology 2006, 17:2982.
7. Sickfaus K, Wills J: Spinel compounds: structure and property relations. J Am Ceram Soc 1998, 82:3279-3292.
8. Mathur S, Veith M, Haas M, Shen H, Lecerf N, Huch V, Hüfner S, Haberkorn R, Beck HP, Jilavi M: Single-source sol-gel synthesis of nanocrystalline ZnAl2O4: structural and optical properties. J Am Ceram Soc 2001, 84:1921-1928.
9. Yoshioka S, Oba F, Huang R, Tanaka I, Mizoguchi T, Yamamoto T: Atomic structures of supersaturated ZnO-Al2O3 solid solutions. J Appl Phys 2008, 103:014309.
10. Volintiru I, Creatore M, Kniknie B, Spee C, van de Sanden M: Evolution of the electrical and structural properties during the growth of Al doped ZnO films by remote plasma-enhanced metalorganic chemical vapor deposition. J Appl Phys 2007, 102:043709.
11. Fang GJ, Li D, Yao BL: Influence of post-deposition annealing on the properties of transparent conductive nanocrystalline ZAO thin films prepared by RF magnetron sputtering with highly conductive ceramic target. Thin Sol Film 2002, 418:156-162.
12. Ahn CH, Kim H, Cho HK: Deposition of Al doped ZnO layers with various electrical types by atomic layer deposition. Thin Solid Films 2010, 519:747-750.
13. Dasgupta NP, Neubert S, Lee W, Trejo O, Lee J-R, Prinz FB: Atomic layer deposition of Al-doped ZnO films: effect of grain orientation on conductivity. Chem Mater 2010, 22:4769-4775.
14. Geng Y, Guo L, Xu SS, Sun QQ, Ding SJ, Lu HL, Zhang DW: Influence of Al doping on the properties of ZnO thin films grown by atomic layer deposition. J Phys Chem C2011,115:12317-12321
15. Lee D-J, Kim H-M, Kwon J-Y, Choi H, Kim S-H, Kim K-B: Structural and electrical properties of atomic layer deposited Al-doped ZnO films. Adv Funct Mater 2011, 21448-455.
16. Luka G, Krajewski T, Wachnicki L, Witkowski B, Lusakowska E, Paszkowicz W, Guziewicz E, Godlewski M: Transparent and conductive undoped zinc oxide thin films grown by atomic layer deposition. Phys Status Solidi A 2010, 207:1568-1571
17. Jung AK, Jung AK: Dialkylzinc compositions having improved thermal stability US Patent 4407758. Westford: Stauffer Chemical Company; October 4, 1983
18. Banerjee P, Lee WJ, Bae KR, Lee SB, Rubloff GW: Structural, electrical, and optical properties of atomic layer deposition Al-doped ZnO films. J Appl Phys 2010, 108:043504.
19. Elam JW, George SM: Growth of ZnO/Al2O3 alloy films using atomic layer deposition techniques. Chem Mater 2003, 15:1020-1028
20. Elam JW, Routkevitch D, George S: Properties of ZnO/Al2O3 alloy films grown using atomic layer deposition techniques. J Electrochem Soc 2003, 150:G339-G347.
21. Gong SC, Jang JG, Chang HJ, Park JS: The characteristics of organic light emitting diodes with Al doped zinc oxide grown by atomic layer deposition as a transparent conductive anode. Synth Met 2011, 161:823-827
22. Lany S, Zunger A: Dopability, intrinsic conductivity, and nonstoichiometry of transparent conducting oxides. Phys Rev Lett 2007, 98:045501
23. Tauc J: The Optical Properties of Solids. Waltham: Academic; 1966.
24. Seetawan U, Jugsujinda S, Seetawan T, Ratchasin A, Euvananont C, Junin C, Thanachayanont C, Chainaronk P: Effect of calcinations temperature on crystallography and nanoparticles in ZnO disk. Mater Sci Appl 2011, 2:1302-1306.