Oxygen deficiency defects in amorphous Al2O3

Journal of Applied Physics

Volumn 108, Issue 1, 2010, Pages

  Perevalov, T V ^a   Tereshenko, O E ^a   Gritsenko, V A ^a   Pustovarov, V A ^b   Yelisseyev, A P ^c   Park, Chanjin ^d   Han, Jeong Hee ^d   Lee, Choongman ^d  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

^b URAL FEDERAL UNIVERSITY   (Russian Federation)

^c TROFIMUK INSTITUTE OF PETROLEUM GEOLOGY AND GEOPHYSICS   (Russian Federation)

^d SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITED; BULK CRYSTALS; ELECTRON ENERGY LOSS SPECTRUM; FIRST-PRINCIPLES; NEUTRAL OXYGEN VACANCY; OXYGEN DEFICIENCY; OXYGEN DEFICIENT; QUANTUM-CHEMICAL SIMULATIONS;

ALUMINUM; AMORPHOUS FILMS; ATOMIC SPECTROSCOPY; ELECTRON ENERGY LOSS SPECTROSCOPY; ENERGY DISSIPATION; OXYGEN; QUANTUM CHEMISTRY;

OXYGEN VACANCIES;

EID: 77955221841     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3455843     Document Type: Article

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