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Applied Physics Letters

Volumn 96, Issue 22, 2010, Pages

Temperature effects on metal-alumina-nitride-oxide-silicon memory operations

(6) Padovani, Andrea a,b Larcher, Luca a,b Heh, Dawei c Bersuker, Gennadi c Della Marca, Vincenzo a,b Pavan, Paolo a,b

a UNIVERSITY OF MODENA AND REGGIO EMILIA (Italy)

b UNIVERSITY OF BOLOGNA (Italy)

c SEMATECH (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA DIELECTRIC; EXPERIMENTAL DATA; MEMORY DEVICE; MEMORY OPERATIONS; PROGRAM AND ERASE; TEMPERATURE DEPENDENCE; TEMPERATURE EFFECTS; TEMPERATURE RANGE;

NITRIDES; SILICON COMPOUNDS; TEMPERATURE;

SILICON OXIDES;

EID: 77953583637 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3446835 Document Type: Article

Times cited : (21)

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