Charge localization during program and retention in nitrided read only memory-like nonvolatile memory devices

Japanese Journal of Applied Physics

Volumn 49, Issue 4 PART 2, 2010, Pages

  Nowak, Etienne ^a   Vianello, Elisa ^a,b   Perniola, Luca ^a   Bocquet, Marc ^a   Molas, Gabriel ^a   Kies, Rabah ^a   Gely, Marc ^a   Ghibaudo, Gerard ^c   De Salvo, Barbara ^a   Reimbold, Gilles ^a   Boulanger, Fabien ^a  

^a CEA LETI   (France)

^b UNIVERSITY OF UDINE   (Italy)

^c IMEP LAHC   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE LOCALIZATION; CHARGE LOSS; DRIFT MODEL; HIGH TEMPERATURE; LATERAL MIGRATION; NONVOLATILE MEMORY DEVICES; QUANTITATIVE ANALYSIS; READ-ONLY MEMORIES; ROOM TEMPERATURE; SATURATION LEVELS; SILICON OXIDE NITRIDE OXIDE SILICONS; TRAP MEMORY; TRAP PROPERTIES; TRAPPED CHARGE; TRAPPING LAYERS; VERTICAL MIGRATION;

CHARGE TRAPPING; HAFNIUM COMPOUNDS; NITRIDES; NONVOLATILE STORAGE; SILICON OXIDES;

FLASH MEMORY;

EID: 77952702006     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.49.04DD12     Document Type: Article

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