SCOPUS 정보 검색 플랫폼

Volumn 3, Issue 19, 2013, Pages 6775-6778

A phthalimide-fused naphthalene diimide with high electron affinity for a high performance n-channel field effect transistor

(5) Chang, Jingjing a Shao, Jinjun a Zhang, Jie b Wu, Jishan a,b Chi, Chunyan a

a NATIONAL UNIVERSITY OF SINGAPORE (Singapore)

b INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

COMPLEMENTARY INVERTERS; CURRENT RATIOS; HIGH ELECTRON AFFINITIES; HIGH ELECTRON MOBILITY; LUMO ENERGY LEVELS; NAPHTHALENE DIIMIDE; OPERATING STABILITY; SOLUTION-PROCESSED;

ELECTRON MOBILITY; ORGANIC FIELD EFFECT TRANSISTORS;

NAPHTHALENE;

EID: 84876707884 PISSN: None EISSN: 20462069 Source Type: Journal
DOI: 10.1039/c3ra40504d Document Type: Article

Times cited : (15)

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