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Journal of Applied Physics

Volumn 113, Issue 14, 2013, Pages

Computational study on band structure engineering using graphene nanomeshes

(4) Sako, Ryutaro a Hasegawa, Naomi a Tsuchiya, Hideaki a,b Ogawa, Matsuto a

a KOBE UNIVERSITY (Japan)

b JAPAN SCIENCE AND TECHNOLOGY AGENCY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE ENGINEERING; CHANNEL MATERIALS; COMPUTATIONAL STUDIES; ELECTRONIC BAND STRUCTURE; HIGH CURRENTS; METAL OXIDE SEMICONDUCTOR; POTENTIAL ABILITY; TIGHT-BINDING APPROACHES;

ELECTRON TRANSPORT PROPERTIES; FIELD EFFECT TRANSISTORS; GRAPHENE;

BAND STRUCTURE;

EID: 84876383657 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.4800624 Document Type: Article

Times cited : (8)

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