Theoretical evaluation of ballistic electron transport in field-effect transistors with semiconducting graphene channels

Japanese Journal of Applied Physics

Volumn 51, Issue 5 PART 1, 2012, Pages

  Tsuchiya, Hideaki ^a,b   Hosokawa, Hiroshi ^a   Sako, Ryutaro ^a   Hasegawa, Naomi ^a   Ogawa, Matsuto ^a  

^a KOBE UNIVERSITY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BALLISTIC ELECTRON TRANSPORT; BAND GAP ENERGY; BI-LAYER; CURRENT PROPERTIES; DEVICE PERFORMANCE; DISPERSION RELATIONS; GATE VOLTAGES; GRAPHENE NANORIBBONS; THEORETICAL EVALUATION;

BALLISTICS; ELECTRON TRANSITIONS; ELECTRON TRANSPORT PROPERTIES; FIELD EFFECT TRANSISTORS; MONOLAYERS; NANOSTRUCTURES;

GRAPHENE;

EID: 84861510505     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.51.055103     Document Type: Article

References (28)

1. K. Novoselov, A. Geim, S. Morozov, D. Jiang, Y. Zhang, S. Dubonos, I. Grigorieva, and A. Firsov: Science 306 (2004) 666.
2. M. Fujita, K. Wakabayashi, K. Nakada, and K. Kusakabe: J. Phys. Soc. Jpn. 65 (1996) 1920.
3. G. Liang, N. Neophytou, D. E. Nikonov, and M. S. Lundstrom: IEEE Trans. Electron Devices 54 (2007) 677.
4. M. Y. Han, B.Özyilmaz, Y. Zhang, and P. Kim: Phys. Rev. Lett. 98 (2007) 206805.
5. X. Li, X. Wang, L. Zhang, S. Lee, and H. Dai: Science 319 (2008) 1229.
6. Y. W. Son, M. L. Cohen, and S. G. Louie: Phys. Rev. Lett. 97 (2006) 216803.
7. J. Cai, P. Ruffieux, R. Jaafar, M. Bieri, T. Braun, S. Blankenburg, M. Muoth, A. P. Seitsonen, M. Saleh, X. Feng, K. Müllen, and R. Fasel: Nature 466 (2010) 470.
8. T. Ohta, A. Bostwick, T. Seyller, K. Horn, and E. Rotenberg: Science 313 (2006) 951.
9. J. B. Oostinga, H. B. Heersche, X. Liu, A. F. Morpurgo, and L. M. K. Vandersypen: Nat. Mater. 7 (2008) 151.
10. Y. Zhang, T.-T. Tang, C. Girit, Z. Hao, M. C. Martin, A. Zettl, M. F. Crommie, Y. R. Shen, and F. Wang: Nature 459 (2009) 820.
11. N. Harada, M. Ohfuti, and Y. Awano: Appl. Phys. Express 1 (2008) 024002.
12. H. Miyazaki, K. Tsukagoshi, A. Kanda, M. Otani, and S. Okada: Nano Lett. 10 (2010) 3888.
13. S. Zhou, G.-H. Gweon, A. Fedorov, P. First, W. de Heer, D.-H. Lee, F. Guinea, A. Castro Neto, and A. Lanzara: Nat. Mater. 6 (2007) 770.
14. G. Giovannetti, P. Khomyakov, G. Brockes, P. Kelly, and J. van den Brink: Phys. Rev. B 76 (2007) 073103.
15. H. Hosokawa, R. Sako, H. Ando, and H. Tsuchiya: Jpn. J. Appl. Phys. 49 (2010) 110207.
16. B. Sahu, H. Min, A. H. MacDonald, and S. K. Banerjee: Phys. Rev. B 78 (2008) 045404.
17. K.-T. Lam and G. Liang: Appl. Phys. Lett. 92 (2008) 223106.
18. E. Sano and T. Otsuji: Jpn. J. Appl. Phys. 48 (2009) 041202.
19. K.-T. Lam and G. Liang: IEDM Tech. Dig., 2009, p. 901.
20. A. H. Castro Neto, F. Guinea, N. M. R. Peres, K. S. Novoselov, and A. K. Geim: Rev. Mod. Phys. 81 (2009) 109.
21. A. Rahman, J. Guo, S. Datta, and M. Lundstrom: IEEE Trans. Electron Devices 50 (2003) 1853.
22. R. Sako, H. Tsuchiya, and M. Ogawa: IEEE Trans. Electron Devices 58 (2011) 3300.
23. H. Min, B. Sahu, S. K. Banerjee, and A. H. MacDonald: Phys. Rev. B 75 (2007) 155115.
24. D. Gunlycke and C. T. White: Phys. Rev. B 77 (2008) 115116.
25. R. Sako, H. Hosokawa, and H. Tsuchiya: IEEE Electron Device Lett. 32 (2011) 6.
26. P. Zhao, J. Chauhan, and J. Guo: Nano Lett. 9 (2009) 684.
27. A. Paul, S. Mehrotra, G. Klimeck, and M. Luisier: Proc. Int. Workshop Computational Electronics (IWCE), 2009, p. 173.
28. Y. Taur, C. H. Hsu, B. Wu, R. Kiehl, B. Davari, and G. Shahidi: Solid-State Electron. 36 (1993) 1085.