Large-area synthesis of graphene by chemical vapor deposition and transfer-free fabrication of field-effect transistors

ECS Transactions

Volumn 35, Issue 3, 2011, Pages 219-228

  Sato, Shintaro ^a,b   Yagi, Katsunori ^a   Kondo, Daiyu ^a,b   Hayashi, Kenjiro ^a,b   Yamada, Ayaka ^a,b   Harada, Naoki ^a,b   Yokoyama, Naoki ^a,b  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMBIPOLAR BEHAVIOR; CU FILMS; FE FILMS; GRAPHENE GROWTH; GROWTH PARAMETERS; HIGH-DENSITY; SOURCE AND DRAIN ELECTRODES; THERMAL CHEMICAL VAPOR DEPOSITION;

ATOMIC LAYER DEPOSITION; CATALYSTS; COPPER; ELECTRODES; FABRICATION; GRAPHENE; HAFNIUM OXIDES; MESFET DEVICES; METALLIC FILMS; NANOWIRES; SEMICONDUCTING SILICON COMPOUNDS; SILICON WAFERS; SYNTHESIS (CHEMICAL); TRANSISTORS; VANADIUM;

CHEMICAL VAPOR DEPOSITION;

EID: 79960799824     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.3569915     Document Type: Conference Paper

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