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Volumn 19, Issue 3, 2011, Pages 320-325

Role of hydrogen in the surface passivation of crystalline silicon by sputtered aluminum oxide

Author keywords

aluminum oxide; sputtering; surface passivation

Indexed keywords

ALUMINUM OXIDE FILMS; ALUMINUM OXIDES; CRYSTALLINE SILICONS; DEPOSITION METHODS; HYDROGEN CONCENTRATION; NEGATIVE CHARGE; P-TYPE; RADIO FREQUENCY MAGNETRON SPUTTERING; SILICON OXIDE LAYERS; SURFACE PASSIVATION;

EID: 79953669857     PISSN: 10627995     EISSN: 1099159X     Source Type: Journal    
DOI: 10.1002/pip.1031     Document Type: Article
Times cited : (21)

References (20)
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    • Saint-Cast, P.1    Kania, M.2    Hofmann, H.3
  • 9
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    • High quality aluminum oxide passivation layer for crystalline silicon solar cells deposited by parallel-plate plasma-enhanced chemical vapor deposition
    • Miyajima S, Irikawa J, Yamada A, Konagai M,. High quality aluminum oxide passivation layer for crystalline silicon solar cells deposited by parallel-plate plasma-enhanced chemical vapor deposition. Applied Physics Express 2010; 3 (1): 012301.
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    • Miyajima, S.1    Irikawa, J.2    Yamada, A.3    Konagai, M.4
  • 10
    • 70350217133 scopus 로고    scopus 로고
    • Effective surface passivation of crystalline silicon by rf sputtered aluminum oxide
    • Li T-TA, Cuevas A,. Effective surface passivation of crystalline silicon by rf sputtered aluminum oxide. Physica Status Solidi-Rapid Research Letters 2009; 3 (5): 160-162.
    • (2009) Physica Status Solidi - Rapid Research Letters , vol.3 , Issue.5 , pp. 160-162
    • Li, T.-T.1    Cuevas, A.2
  • 11
    • 78149362339 scopus 로고    scopus 로고
    • Influence of oxygen on the sputtering of aluminum oxide for the surface passivation of crystalline silicon
    • (in press). DOI: 10.1016/j.solmat.2010.03.034
    • Li T-TA, Ruffell S, Tucci M, et al,., Influence of oxygen on the sputtering of aluminum oxide for the surface passivation of crystalline silicon. Solar energy materials and solar cells (in press). DOI: 10.1016/j.solmat.2010. 03.034.
    • Solar Energy Materials and Solar Cells
    • Li, T.-T.1    Ruffell, S.2    Tucci, M.3
  • 14
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    • General parameterization of Auger recombination in crystalline silicon
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    • Kerr, M.J.1    Cuevas, A.2
  • 17
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    • ALD and characterization of aluminum oxide deposited on Si(100) using tris(diethylamino) aluminum and water vapor
    • DOI 10.1149/1.2239258
    • Katamreddy R, Inman R, Jursich G, et al,. ALD and characterization of aluminum oxide deposited on Si(100) using Tris(diethylamino) aluminum and water vapor. Journal of The Electrochemical Society 2006; 153 (10): C701-C706. (Pubitemid 44343848)
    • (2006) Journal of the Electrochemical Society , vol.153 , Issue.10
    • Katamreddy, R.1    Inman, R.2    Jursich, G.3    Soulet, A.4    Takoudis, C.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.