Electrical and photoresponse properties of Al/p-CuFeO2/p-Si/Al MTCOS photodiode

Solar Energy

Volumn 92, Issue , 2013, Pages 1-6

  Gupta, R K ^a   Cavas, M ^b   Al Ghamdi, Ahmed A ^c   Gafer, Z H ^d   El Tantawy, F ^e   Yakuphanoglu, F ^b,c  

^a PITTSBURG STATE UNIVERSITY   (United States)

^b FIRAT UNIVERSITY   (Turkey)

^c KING ABDULAZIZ UNIVERSITY   (Saudi Arabia)

^d KING KHALID UNIVERSITY   (Saudi Arabia)

^e Suez Canal University   (Egypt)

Author keywords

Band gap; Capacitance; CuFeO2; Junction properties; Schottky diode; Sol gel

Indexed keywords

CUFEO2; IDEALITY FACTORS; JUNCTION PROPERTIES; OPTICAL AND ELECTRICAL PROPERTIES; OXIDE SEMICONDUCTOR; SCHOTTKY DIODES; SCHOTTKY PHOTODIODES; TRANSPARENT SEMICONDUCTOR;

CAPACITANCE; DIODES; ENERGY GAP; PHOTODIODES; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR DIODES; SOL-GELS;

ELECTRIC PROPERTIES;

DATA ACQUISITION; GEL; INTERFACE; OPTICAL METHOD; OPTICAL THEORY;

EID: 84875776931     PISSN: 0038092X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solener.2013.03.002     Document Type: Article

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