Photodiodes based on graphene oxide-silicon junctions

Solar Energy

Volumn 86, Issue 10, 2012, Pages 2961-2966

  Phan, D T ^a   Gupta, R K ^b   Chung, G S ^a   Al Ghamdi, A A ^c   Al Hartomy, Omar A ^c,d   El Tantawy, F ^e   Yakuphanoglu, F ^c,f  

^a University of Ulsan   (South Korea)

^b NORTH CAROLINA A AND T STATE UNIVERSITY   (United States)

^c KING ABDULAZIZ UNIVERSITY   (Saudi Arabia)

^d UNIVERSITY OF TABUK   (Saudi Arabia)

^e Suez Canal University   (Egypt)

^f FIRAT UNIVERSITY   (Turkey)

Author keywords

Barrier height; Graphene oxide; Ideality factor; Photoconductor; Schottky diode

Indexed keywords

BARRIER HEIGHTS; CONTINUOUS DISTRIBUTION; GRAPHENE OXIDES; IDEALITY FACTORS; ILLUMINATION INTENSITY; IV CHARACTERISTICS; JUNCTION PARAMETERS; LIGHT INTENSITY; PHOTOSENSOR; SCHOTTKY DIODES; TRANSIENT PHOTOCURRENTS;

CAPACITANCE; DIODES; PHOTOCONDUCTING MATERIALS; SCHOTTKY BARRIER DIODES;

CURRENT VOLTAGE CHARACTERISTICS;

ALUMINUM; CARBON; CONDUCTIVITY; LIGHT INTENSITY; OXIDE; RENEWABLE RESOURCE; SENSOR; SILICON; SOLAR POWER;

EID: 84865766286     PISSN: 0038092X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solener.2012.07.002     Document Type: Article

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