Impurity dependent semiconductor type of epitaxial CuFeO2 (111) thin films deposited by using a pulsed laser deposition

Thin Solid Films

Volumn 517, Issue 14, 2009, Pages 3987-3989

  Choi, Dong Hyeok ^a   Moon, Seung Je ^a   Hong, Jong Soo ^a   An, Sung Yong ^b   Shim, In Bo ^a   Kim, Chul Sung ^a  

^a Kookmin University   (South Korea)

^b Samsung Electro Mechanics   (South Korea)

Author keywords

CuFeO2 thin film; p Type semiconductor; PLD

Indexed keywords

AMORPHOUS GLASS; AVERAGE GRAIN SIZES; CUFEO2 THIN FILM; INSULATION PROPERTIES; P -TYPE CONDUCTIVITIES; P TYPES; P-TYPE SEMICONDUCTOR; PLD; RHOMBOHEDRAL STRUCTURES; SEM IMAGES; SEMICONDUCTOR TYPES;

ELECTRIC CONDUCTIVITY; GLASS; IMPURITIES; PROGRAMMABLE LOGIC CONTROLLERS; PULSED LASER DEPOSITION; SEMICONDUCTOR MATERIALS; SUBSTRATES; THIN FILM DEVICES; THIN FILMS;

AMORPHOUS FILMS;

EID: 65449118309     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.01.111     Document Type: Article

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