Nanostructure Cu2ZnSnS4 thin film prepared by sol-gel for optoelectronic applications

Solar Energy

Volumn 85, Issue 10, 2011, Pages 2518-2523

  Yakuphanoglu, Fahrettin ^a,b  

^a FIRAT UNIVERSITY   (Turkey)

^b KING SAUD UNIVERSITY   (Saudi Arabia)

Author keywords

Nanostructure cu2znsns4 thin film; Photovoltaic; Sol gel

Indexed keywords

AFM IMAGE; BARRIER HEIGHTS; CU2ZNSNS4; GLASS SUBSTRATES; HETEROJUNCTION PHOTODIODES; IDEALITY FACTORS; INTERFACE STATE; INTERFACE STATE DENSITY; N TYPE SILICON; NANOSTRUCTURE MATERIAL; OPTOELECTRONIC APPLICATIONS; PHOTOSENSOR; PHOTOVOLTAIC; RECTIFICATION BEHAVIOR; SERIES RESISTANCES; SOL-GEL TECHNIQUE;

ATOMIC FORCE MICROSCOPY; CRYSTAL ATOMIC STRUCTURE; CURRENT VOLTAGE CHARACTERISTICS; DIODES; ELECTRIC RECTIFIERS; ENERGY GAP; GELS; HETEROJUNCTIONS; NANOSTRUCTURES; OPTICAL BAND GAPS; PHOTOVOLTAIC EFFECTS; SOL-GEL PROCESS; SOL-GELS; SOLS; SUBSTRATES; THIN FILMS;

COPPER;

ATOMIC FORCE MICROSCOPY; ELECTRONIC EQUIPMENT; FILM; NANOTECHNOLOGY; PARTICLE SIZE; PHOTOVOLTAIC SYSTEM; SUBSTRATE; THIN SECTION;

EID: 80052291371     PISSN: 0038092X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solener.2011.07.012     Document Type: Article

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