The disintegration of GaSb/GaAs nanostructures upon capping

Applied Physics Letters

Volumn 102, Issue 11, 2013, Pages

  Martin, Andrew J ^a   Hwang, Jinyoung ^a   Marquis, Emmanuelle A ^a   Smakman, Erwin ^b   Saucer, Timothy W ^a   Rodriguez, Garrett V ^a   Hunter, Allen H ^a   Sih, Vanessa ^a   Koenraad, Paul M ^b   Phillips, Jamie D ^a   Millunchick, Joanna ^a  

^a UNIVERSITY OF MICHIGAN   (United States)

^b EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

ATOM PROBE TOMOGRAPHY; BAND TRANSITION ENERGIES; CROSS-SECTIONAL SCANNING TUNNELING MICROSCOPIES; EMISSION ENERGIES; FULL THREE-DIMENSIONAL; GASB/GAAS; GASB/GAAS QUANTUM DOTS; K.P MODELS;

OPTICAL PROPERTIES; SCANNING TUNNELING MICROSCOPY;

SEMICONDUCTOR QUANTUM DOTS;

EID: 84875706698     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4796036     Document Type: Article

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