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Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

Volumn 30, Issue 2, 2012, Pages

Analysis of defect-free GaSb/GaAs(001) quantum dots grown on the Sb-terminated (2 8) surface

(9) Martin, Andrew J a Saucer, Timothy W a Sun, Kai a Joo Kim, Sung a Ran, Guang a Rodriguez, Garrett V a Pan, Xiaoqing a Sih, Vanessa a Millunchick, Joanna a

a UNIVERSITY OF MICHIGAN (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ASPECT RATIO; SEMICONDUCTOR QUANTUM DOTS; SURFACE RECONSTRUCTION; TRANSMISSION ELECTRON MICROSCOPY;

AREAL DENSITIES; DEFECT-FREE; GASB/GAAS; LAYER INTERFACES; MORPHOLOGICAL STABILITY; PHOTOLUMINESCENCE PEAK; QUANTUM DOT STRUCTURE; QUANTUM RING FORMATION; SINGLE LAYER;

SURFACE DEFECTS;

EID: 84861589967 PISSN: 21662746 EISSN: 21662754 Source Type: Journal
DOI: 10.1116/1.3675455 Document Type: Article

Times cited : (15)

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