GaSb/GaAs quantum dot formation and demolition studied with cross-sectional scanning tunneling microscopy

Applied Physics Letters

Volumn 100, Issue 14, 2012, Pages

  Smakman, E P ^a   Garleff, J K ^a   Young, R J ^b   Hayne, M ^b   Rambabu, P ^a   Koenraad, P M ^a  

^a EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

^b LANCASTER UNIVERSITY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CAP LAYERS; CROSS-SECTIONAL SCANNING TUNNELING MICROSCOPIES; GAAS; GASB/GAAS; GROWTH PARAMETERS; HIGH GROWTH TEMPERATURES; INHOMOGENEOUS STRUCTURE; LOCAL STRAIN FIELD; RING FORMATION; THREADING DISLOCATION;

MOLECULAR BEAM EPITAXY; NANOSTRUCTURES; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTOR QUANTUM DOTS;

GALLIUM ALLOYS;

EID: 84859803407     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3701614     Document Type: Article

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