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Applied Physics A: Materials Science and Processing

Volumn 79, Issue 3, 2004, Pages 587-591

Tuning vertically stacked InAs/GaAs quantum dot properties under spacer thickness effects for 1.3 μm emission

(7) Bouzaiene L a Ilahi, B a Sfaxi, L a Hassen, F a Maaref, H a Marty, O b Dazord, J b

a FACULTÉ DES SCIENCES DE MONASTIR (Tunisia)

b UNIVERSITÉ LYON 1 (France)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; LIGHT EMISSION; MULTILAYERS; OPTIMIZATION; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY; TUNING;

QUANTUM DEVICES; SELF-ORGANIZED GROWTH; STACKED LAYERS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 3042590034 PISSN: 09478396 EISSN: None Source Type: Journal
DOI: 10.1007/s00339-003-2455-3 Document Type: Article

Times cited : (25)

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