Electrical characterization and conduction mechanism of impurity-doped BaSi 2 films grown on Si(111) by molecular beam epitaxy

Thin Solid Films

Volumn 522, Issue , 2012, Pages 95-99

  Khan, M Ajmal ^a   Saito, T ^a   Nakamura, K ^a   Baba, M ^a   Du, W ^a   Toh, K ^a   Toko, K ^a   Suemasu, T ^a,b  

^a UNIVERSITY OF TSUKUBA   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

Barium silicide; Impurity doping; Molecular beam epitaxy; Solar cells

Indexed keywords

CONDUCTION MECHANISM; CU-DOPED; ELECTRICAL CHARACTERIZATION; IMPURITY DOPING; N-TYPE CONDUCTIVITY; P-TYPE CONDUCTIVITY; ROOM TEMPERATURE; SI (1 1 1); TEMPERATURE DEPENDENCE; VAN DER PAUW TECHNIQUE; VARIABLE-RANGE HOPPING CONDUCTION;

ALUMINUM; BARIUM; COPPER; EPITAXIAL GROWTH; GALLIUM; GALLIUM ALLOYS; MOLECULAR BEAM EPITAXY; SILICIDES; SILICON; SOLAR CELLS;

SILVER;

EID: 84868570579     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2012.09.005     Document Type: Conference Paper

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