Effects of growth pressure on the structural and optical properties of multi quantum wells (MQWs) in blue LED

Ultramicroscopy

Volumn 127, Issue , 2013, Pages 114-118

  Park, C G ^a   Gu, G H ^a   Lee, B H ^a   Jang, D H ^a  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

Author keywords

Composition fluctuation; Electroluminescence; InGaN; Metal organic chemical vapor deposition; Multi quantum well; Three dimensional atom probe

Indexed keywords

C-PLANE SAPPHIRE SUBSTRATES; COMPOSITION FLUCTUATIONS; ELECTROLUMINESCENCE SPECTROSCOPY; INGAN; MULTI QUANTUM WELLS; SCANNING TRANSMISSION ELECTRON MICROSCOPY; STRUCTURAL AND OPTICAL PROPERTIES; THREE-DIMENSIONAL ATOM PROBE;

ELECTROLUMINESCENCE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL PROPERTIES; RAMAN SPECTROSCOPY; TELECOMMUNICATION REPEATERS; TRANSMISSION ELECTRON MICROSCOPY; VAPORS;

SEMICONDUCTOR QUANTUM WELLS;

NANOMATERIAL;

ARTICLE; ATOM PROBE TOMOGRAPHY; CHEMICAL REACTION; CRYSTALLIZATION; ELECTRICAL EQUIPMENT; GROWTH RATE; IMAGE ANALYSIS; IMAGE PROCESSING; LIGHT EMITTING DIODE; LUMINESCENCE; METAL ORGANIC CHEMICAL VAPOR DEPOSITION; MULTIPLE QUANTUM WELL; NANOTECHNOLOGY; PRESSURE MEASUREMENT; RAMAN SPECTROMETRY; SCANNING TRANSMISSION ELECTRON MICROSCOPY; THERMODYNAMICS; TOMOGRAPHY;

EID: 84875548572     PISSN: 03043991     EISSN: 18792723     Source Type: Journal    
DOI: 10.1016/j.ultramic.2012.07.009     Document Type: Article

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