Influence of growth temperature on the stoichiometry of InSb nanowires grown by vapor phase transport

Semiconductor Science and Technology

Volumn 25, Issue 7, 2010, Pages

  Philipose, U ^a   Sapkota, Gopal ^a   Salfi, J ^b   Ruda, Harry E ^b  

^a UNIVERSITY OF NORTH TEXAS   (United States)

^b UNIVERSITY OF TORONTO   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION ANALYSIS; CRITICAL PARAMETER; ELECTRICAL TRANSPORT MEASUREMENTS; GROWING CRYSTALS; GROWTH PARAMETERS; INDIUM ANTIMONIDE; INSB NANOWIRE; METAL CATALYST; N-TYPE CONDUCTION; OPTIMUM GROWTH TEMPERATURE; ROOM TEMPERATURE; VAPOR PHASE TRANSPORT;

CATALYSTS; ELECTRIC WIRE; GROWTH TEMPERATURE; INDIUM; NANOWIRES; OHMIC CONTACTS; SCANNING ELECTRON MICROSCOPY; STOICHIOMETRY; VAPORS;

INDIUM ANTIMONIDES;

EID: 77953741577     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/25/7/075004     Document Type: Article

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