Defect centers and optical absorption edge of degenerated semiconductor ZnO thin films grown by a reactive plasma deposition by means of piezoelectric photothermal spectroscopy

Journal of Applied Physics

Volumn 99, Issue 4, 2006, Pages

  Sakai, K ^a   Kakeno, T ^a   Ikari, T ^a   Shirakata, S ^b   Sakemi, T ^c   Awai, K ^d   Yamamoto, T ^e  

^a UNIVERSITY OF MIYAZAKI   (Japan)

^b EHIME UNIVERSITY   (Japan)

^c SUMITOMO HEAVY INDUSTRIES LTD   (Japan)

^d Sumiju Technical Center Co Ltd   (Japan)

^e KOCHI UNIVERSITY OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECTS; OXYGEN; PIEZOELECTRICITY; SEMICONDUCTOR DOPING; THIN FILMS; ZINC OXIDE;

OXYGEN FLOW RATE; OXYGEN VACANCIES; REACTIVE PLASMA DEPOSITION METHOD;

LIGHT ABSORPTION;

EID: 33644608786     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2173040     Document Type: Article

References (33)

1. G. S. Chae, Jpn. J. Appl. Phys., Part 1 40, 1282 (2001).
2. B. Sang, K. Dairiki, A. Yamada, and M. Konagai, Jpn. J. Appl. Phys., Part 1 38, 4983 (1999).
3. S. Chaisitsak, T. Sugiyama, A. Yamada, and M. Konagai, Jpn. J. Appl. Phys., Part 1 38, 4989 (1999).
4. C. Agashe, O. Kluth, G. Schope, H. Siekmann, J. Hupkes, and B. Rech, Thin Solid Films 442, 167 (2003).
5. K. Nakahara et al., Jpn. J. Appl. Phys., Part 1 40, 250 (2001).
6. H. Kato, M. Sano, K. Miyamoto, and T. Yao, J. Appl. Phys. 92, 1960 (2002).
7. C. R. Gorla, N. W. Emanetoglu, S. Liang, W. E. Mayo, Y. Lu, M. Wraback, and H. Shen, J. Appl. Phys. 85, 2595 (1999).
8. J. M. Myoung, W. H. Yoon, D. H. Lee, I. Yun, S. H. Bae, and S. Y. Lee, Jpn. J. Appl. Phys., Part 1 41, 28 (2002).
9. K. Iwata et al., Thin Solid Films 451-452, 219 (2004).
10. T. Yamamoto and H. Katayama-Yoshida, Jpn. J. Appl. Phys., Part 2 38, L166 (1999).
11. S. Shirakata, T. Sakemi, K. Awai, and T. Yamamoto, Thin Solid Films 451-452, 212 (2004).
12. T. Yamamoto, T. Sakemi, K. Awai, and S. Shirakata, Thin Solid Films 451-452, 439 (2004).
13. S. Shirakata, T. Sakemi, K. Awai, and T. Yamamoto, Thin Solid Films 445, 278 (2003).
14. K. Iwata et al., Thin Solid Films 445, 274 (2003).
15. K. Sakai, A. Fukuyama, T. Toyoda, and T. Ikari, Jpn. J. Appl. Phys., Part 1 41, 3371 (2002).
16. T. Ikari and A. Fukuyama, in Semiconductor and Electronic Materials, Progress in Photo-thermal and Photoacoustic Science and Technology, edited by, A. Mandelis, and, P. Hess, (SPIE, Bellingham, 2000), Chap., p. 146.
17. K. Ogata, K. Sakurai, Sz. Fujita, Sg. Fujita, and K. Matsushige, J. Cryst. Growth 214215, 312 (2000).
18. K. Vanheusden, C. H. Seager, W. L. Warren, D. R. Tallant, and J. A. Voigt, Appl. Phys. Lett. 68, 403 (1996).
19. G. D. Mahan, J. Appl. Phys. 54, 3825 (1983).
20. J. C. Simpson and J. F. Cordaro, J. Appl. Phys. 67, 6760 (1990).
21. Y. Ma et al., J. Appl. Phys. 95, 6268 (2004).
22. A. Uedono, T. Koida, A. Tsukazaki, M. Kawasaki, Z. Q. Chen, S. F. Chichibu, and H. Koinuma, J. Appl. Phys. 93, 2481 (2003).
23. B. Lin and Y. Jia, Appl. Phys. Lett. 79, 943 (2001).
24. T. B. Hur, G. S. Jeen, Y. H. Hwang, and H. K. Kim, J. Appl. Phys. 94, 5787 (2003).
25. E. Burstein, Phys. Rev. 93, 632 (1954).
26. K. Vanheusden, W. L. Warren, D. H. Seager, D. R. Tallant, J. A. Voigt, and B. E. Gnade, J. Appl. Phys. 79, 7983 (1996).
27. H. S. Kang, J. S. Kang, J. W. Kim, and S. Y. Lee, J. Appl. Phys. 95, 1246 (2004).
28. T. Yamamoto, Thin Solid Films 420-421, 100 (2002).
29. B. E. Sernelius, K.-F. Berggren, Z.-C. Jin, I. Hamberg, and C. G. Granqvist, Phys. Rev. B 37, 10244 (1988).
30. S. C. Jain, J. M. McGregor and D. J. Roulston, J. Appl. Phys. 68, 3747 (1990).
31. F. Stern, J. Appl. Phys. 47, 5382 (1976).
32. A. P. Roth, J. B. Webb, and D. F. Williams, Phys. Rev. B 25, 7836 (1982).
33. P. E. Schmid, Phys. Rev. B 23, 5531 (1981).