Highly efficient InGaN-based 383-nm ultraviolet light-emitting diodes fabricated on sapphire substrate using high-temperature-grown AlN buffer

Applied Physics Express

Volumn 1, Issue 10, 2008, Pages 1011011-1011013

  Ohba, Yasuo ^a   Kaneko, Kei ^a   Katsuno, Hiroshi ^a   Kushibe, Mitsuhiro ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CORUNDUM; FLIP CHIP DEVICES; GALLIUM ALLOYS; GALLIUM NITRIDE; LIGHT EMISSION; LIGHT EMITTING DIODES; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM DOTS; ULTRAVIOLET INSTRUMENTS; ULTRAVIOLET RADIATION;

ACTIVE LAYERS; ALN BUFFERS; EMISSION EFFICIENCIES; EXTERNAL QUANTUM EFFICIENCIES; HIGH TEMPERATURES; HIGHLY EFFICIENT; INTERNAL QUANTUM EFFICIENCIES; OPERATION VOLTAGES; OUTPUT POWERS; PHOTOLUMINESCENCE INTENSITIES; SAPPHIRE SUBSTRATES; ULTRAVIOLET LIGHTS;

QUANTUM EFFICIENCY;

EID: 57649108149     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.1143/APEX.1.101101     Document Type: Article

References (12)

1. I. Akasaki, H. Amano, Y. Koide, K. Hiramatsu, and N. Sawaki: J. Cryst. Growth 98 (1989) 209.
2. S. Nakamura, M. Senoh, and T. Mukai: Jpn. J. Appl. Phys. 30 (1991) L1708.
3. S. Nakamura, T. Mukai, and M. Senoh: Appl. Phys. Lett. 64 (1994) 1687.
4. S. Nakamura, I. Niki, K. Izuno, M. Yamada, Y. Murazaki, and T. Mukai: Jpn. J. Appl. Phys. 41 (2002) L371.
5. M. Murakami: in Phosphor Handbook, ed. W. M. Yen, S. Shionoya, and H. Yamamoto (CRC Press, Boca Raton, FL, 2007) 2nd ed., p. 495.
6. H. Hirayama: J. Appl. Phys. 97 (2005) 091101.
7. D. Morita, M. Yamamoto, K. Akaishi, K. Matoba, K. Yasutomo, Y. Kasai, M. Sano, S. Nagahama, and T. Mukai: Jpn. J. Appl. Phys. 43 (2004) 5945.
8. Y. Ohba and R. Sato: J. Cryst. Growth 221 (2000) 258.
9. Y. Ohba and S. Iida: Jpn. J. Appl. Phys. 41 (2002) L615.
10. Y. Ohba, T. Gotoda, and K. Kaneko: J. Cryst. Growth 298 (2007) 682.
11. K. Tadatomo, H. Okagawa, Y. Ohuchi, T. Tsunekawa, Y. Imada, M. Kato, and T. Taguchi: Jpn. J. Appl. Phys. 40 (2001) L583.
12. Y. C. Shen, J. J. Wierer, M. R. Krames, M. J. Ludowise, M. S. Misra, F. Ahmed, A. Y. Kim, G. O. Mueller, J. C. Bhat, S. A. Stockman, and P. S. Martin: Appl. Phys. Lett. 82 (2003) 2221.