284-300nm quaternary InAlGaN-based deep-ultraviolet light-emitting diodes on Si(111) substrates

Applied Physics Express

Volumn 4, Issue 6, 2011, Pages

  Fujikawa, Sachie ^a,b   Hirayama, Hideki ^a,b  

^a INST OF PHYS AND CHEMICAL RESEARCH   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALN; ALN LAYERS; AT-WAVELENGTH; CONTINUOUS-WAVE OPERATIONS; DEEP-ULTRAVIOLET LIGHT-EMITTING DIODES; GROWTH METHOD; INALGAN; INITIAL STAGES; LARGE SIZES; LOW-PRESSURE METAL-ORGANIC CHEMICAL VAPOR DEPOSITIONS; LP-MOCVD; ROOM TEMPERATURE; SI SUBSTRATES; SI(111) SUBSTRATE; THREADING DISLOCATION DENSITIES;

DISLOCATIONS (CRYSTALS); LIGHT EMISSION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; ORGANIC CHEMICALS; ORGANIC LIGHT EMITTING DIODES (OLED); SEMICONDUCTING SILICON COMPOUNDS; SILICON; ULTRAVIOLET RADIATION;

SUBSTRATES;

EID: 79958797357     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.1143/APEX.4.061002     Document Type: Article

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