One-step growth of curled GaN nanowires using chemical vapor deposition method

Vacuum

Volumn 95, Issue , 2013, Pages 6-11

  Beh, K P ^a   Yam, F K ^a   Low, L L ^a   Hassan, Z ^a  

^a SCHOOL OF PHYSICS   (Malaysia)

Author keywords

GaN; Nanowires; Photoluminescence; Structural; Surface morphology

Indexed keywords

CHEMICAL VAPOR DEPOSITION METHODS; GAN; GAUSSIAN FITTING; HEXAGONAL WURTZITE; PHOTOLUMINESCENCE SPECTRUM; SILICON SUBSTRATES; STRUCTURAL; YELLOW LUMINESCENCE;

CHEMICAL VAPOR DEPOSITION; GALLIUM NITRIDE; PHOTOLUMINESCENCE; RAMAN SPECTROSCOPY; SAPPHIRE; SURFACE MORPHOLOGY; VAPORS; X RAY DIFFRACTION; ZINC SULFIDE;

NANOWIRES;

EID: 84875140054     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.vacuum.2013.01.025     Document Type: Article

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