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Thin Solid Films

Volumn 520, Issue 2, 2011, Pages 756-760

The growth of heavily Mg-doped GaN thin film on Si substrate by molecular beam epitaxy

(7) Chin, C W a Yam, F K a Beh, K P a Hassan, Z a Ahmad, M A a Yusof, Y a Bakhori, S K Mohd a

a SCHOOL OF PHYSICS (Malaysia)

Author keywords

Burstein Moss effect; Characterizations; p GaN; RF MBE; RHEED

Indexed keywords

ACCEPTOR LEVELS; BAND-EDGE EMISSIONS; BURSTEIN-MOSS EFFECTS; CONDUCTION BAND EDGE; ELECTRON ENERGIES; EMISSION PEAKS; GAN THIN FILMS; HALL EFFECT MEASUREMENT; MG-DOPED; P-GAN; PHOTOLUMINESCENCE SPECTRUM; RAMAN PEAK; RF-MBE; SI SUBSTRATES; STRUCTURAL QUALITIES; X-RAY DIFFRACTION MEASUREMENTS;

DIFFRACTION; ELECTRON MOBILITY; EPITAXIAL GROWTH; FILM GROWTH; HALL EFFECT; HOLE CONCENTRATION; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; SCANNING ELECTRON MICROSCOPY; SECONDARY BATTERIES; SEMICONDUCTING SILICON COMPOUNDS; X RAY DIFFRACTION;

GALLIUM NITRIDE;

EID: 80755133525 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/j.tsf.2011.06.070 Document Type: Conference Paper

Times cited : (14)

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