AlGaN/AlN quantum dots for UV light emitters

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 10, Issue 3, 2013, Pages 285-288

  Himwas, C ^a   den Hertog, M ^a   Donatini, F ^a   Dang, Le Si ^a   Rapenne, L ^b   Sarigiannidou, E ^b   Songmuang, R ^a   Monroy, E ^a  

^a CEA GRENOBLE   (France)

^b GRENOBLE INSTITUTE OF TECHNOLOGY   (France)

Author keywords

GaN; Nanowire; Quantum dot; Ultraviolet

Indexed keywords

CARRIER CONFINEMENTS; CHEMICAL COMPOSITIONS; EMISSION SPECTRUMS; EMISSION WAVELENGTH; GAN; INTERNAL QUANTUM EFFICIENCY; ULTRAVIOLET; UV LIGHT EMITTERS;

EMISSION SPECTROSCOPY; NANOWIRES;

SEMICONDUCTOR QUANTUM DOTS;

EID: 84875000585     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.201200679     Document Type: Article

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15. The decay time is defined by an exponential fit of the PL decay in the range where the PL intensity decreases from 90% to 10% of its maximum value.