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Volumn 80, Issue 2, 2002, Pages 261-263

Correlation of charge transport to local atomic strain in Si-rich silicon nitride thin films

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC STRAIN; BARRIER HEIGHTS; COMPOSITION RANGES; INDUCED STRAIN; MOLECULAR LEVELS; ORDERS OF MAGNITUDE; POOLE-FRENKEL; POOLE-FRENKEL EMISSION; SI-N BONDS; SILICON NITRIDE THIN FILMS;

EID: 79956018651     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1433167     Document Type: Article
Times cited : (35)

References (14)
  • 5
    • 79957934908 scopus 로고
    • Wiley, New York, 1981), 402, or S. P. Sinitsa, in Silicon Nitride in Electronics, edited by V. I. Belyi (Elsevier, New York
    • See, for example, S. M. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley, New York, 1981), p. 402, or S. P. Sinitsa, in Silicon Nitride in Electronics, edited by V. I. Belyi (Elsevier, New York, 1988), p. 203.
    • (1988) Physics of Semiconductor Devices, 2nd Ed. , pp. 203
    • Sze, S.M.1
  • 6
    • 36849108306 scopus 로고
    • jaJAPIAU 0021-8979
    • S. M. Sze, J. Appl. Phys. 38, 2951 (1967). jap JAPIAU 0021-8979
    • (1967) J. Appl. Phys. , vol.38 , pp. 2951
    • Sze, S.M.1
  • 9
    • 0010123339 scopus 로고    scopus 로고
    • jaJAPIAU 0021-8979
    • S. Habermehl, J. Appl. Phys. 83, 4672 (1998). jap JAPIAU 0021-8979
    • (1998) J. Appl. Phys. , vol.83 , pp. 4672
    • Habermehl, S.1
  • 10
    • 0001331579 scopus 로고
    • apl APPLAB 0003-6951
    • B. H. Yun, Appl. Phys. Lett. 27, 256 (1975). apl APPLAB 0003-6951
    • (1975) Appl. Phys. Lett. , vol.27 , pp. 256
    • Yun, B.H.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.