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Volumn 88, Issue 8, 2011, Pages 2622-2624
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Realization of ultra dense arrays of vertical silicon nanowires with defect free surface and perfect anisotropy using a top-down approach
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Author keywords
Electron beam lithography; Highly dense arrays of vertical Si nanowires; Oxidation of Si nanostructure; Top down approach
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Indexed keywords
1D NANOSTRUCTURES;
DEFECT-FREE SURFACES;
DENSE ARRAYS;
FUTURE GENERATIONS;
HIGHLY DENSE;
NANO-DEVICES;
NANOWIRES ARRAYS;
OXIDATION MECHANISMS;
SILICON NANOWIRES;
SURFACE CLEANLINESS;
TOP-DOWN APPROACH;
TOP-DOWN FABRICATION;
ANISOTROPY;
OXIDATION;
SILICON;
NANOWIRES;
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EID: 79960060960
PISSN: 01679317
EISSN: None
Source Type: Journal
DOI: 10.1016/j.mee.2010.12.102 Document Type: Conference Paper |
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Times cited : (36)
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References (14)
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