Impact of Se flux on the defect formation in polycrystalline Cu(In,Ga)Se2 thin films grown by three stage evaporation process

Journal of Applied Physics

Volumn 113, Issue 6, 2013, Pages

  Islam, M M ^a,c   Uedono, A ^a   Sakurai, T ^a   Yamada, A ^b   Ishizuka, S ^b   Matsubara, K ^b   Niki, S ^b   Akimoto, K ^a  

^a UNIVERSITY OF TSUKUBA   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^c UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CIGS FILMS; CU (IN ,GA)SE; DEFECT COMPLEX; DEFECT FORMATION; EVAPORATION PROCESS; INHOMOGENEITIES; POLYCRYSTALLINE; POSITRON ANNIHILATION SPECTRA; SOLAR CELL PERFORMANCE; SUBSURFACE REGIONS; SURFACE REGION;

COPPER; GALLIUM; POSITRON ANNIHILATION SPECTROSCOPY;

SEMICONDUCTING SELENIUM COMPOUNDS;

EID: 84874302996     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4792049     Document Type: Article

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