Texture and morphology variations in (In,Ga)2Se3 and Cu(In,Ga)Se2 thin films grown with various Se source conditions

Progress in Photovoltaics: Research and Applications

Volumn 21, Issue 4, 2013, Pages 544-553

  Ishizuka, Shogo ^a   Yamada, Akimasa ^a   Fons, Paul ^a   Niki, Shigeru ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

(In,Ga)2Se3; Cu(In,Ga)Se2; RF plasma cracked Se; Se flux; texture

Indexed keywords

(IN,GA)2SE3; CU (IN ,GA)SE; DISTRIBUTION PROFILES; GRANULAR MORPHOLOGY; RF PLASMA; STICKING COEFFICIENTS; SYSTEMATIC VARIATION; THREE-STAGE PROCESS;

COPPER; CRACKS; FILM GROWTH; GALLIUM; MORPHOLOGY; OPEN CIRCUIT VOLTAGE; SODIUM; TEXTURES;

SEMICONDUCTING SELENIUM COMPOUNDS;

EID: 84878189897     PISSN: 10627995     EISSN: 1099159X     Source Type: Journal    
DOI: 10.1002/pip.1227     Document Type: Article

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