Tensile strained GeSn on Si by solid phase epitaxy

Applied Physics Letters

Volumn 102, Issue 5, 2013, Pages

  Lieten, R R ^a,b   Seo, J W ^a   Decoster, S ^a   Vantomme, A ^a   Peters, S ^c   Bustillo, K C ^d   Haller, E E ^d   Menghini, M ^a   Locquet, J P ^a  

^a UNIVERSITY OF LEUVEN   (Belgium)

^b IMEC   (Belgium)

^c SENTECH INSTRUMENTS GMBH   (Germany)

^d University of California Berkeley   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS LAYER; BAND TRANSITIONS; DIRECT BAND GAP; GROUP-IV; SILICON SUBSTRATES; SINGLE-CRYSTALLINE; SOLID PHASE EPITAXY; STRUCTURAL QUALITIES; SURFACE MOBILITY;

CRYSTALLINE MATERIALS; GERMANIUM; TIN;

EPITAXIAL GROWTH;

EID: 84874068040     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4790302     Document Type: Article

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