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Journal of Applied Physics

Volumn 107, Issue 7, 2010, Pages

Theoretical gain of strained GeSn0.02/Ge1-x-y′ SixSny′ quantum well laser

(4) Zhu, Yuan Hui a Xu, Qiang a Fan, Wei Jun a Wang, Jian Wei b

a NANYANG TECHNOLOGICAL UNIVERSITY (Singapore)

b INSTITUTE OF SEMICONDUCTORS (China)

Author keywords

[No Author keywords available]

Indexed keywords

ARBITRARY COMPOSITIONS; BAND EDGE; BARRIER LAYERS; CONDUCTION SUBBANDS; HAMILTONIAN MODELS; L-VALLEY; MOLE FRACTION; OPTICAL GAIN SPECTRA; QUANTUM WELL STRUCTURES; QUANTUM WELL SYSTEMS; STRAINED QUANTUM WELLS; THEORETICAL MODELS; TRANSITION PROBABILITIES; TYPE-II QUANTUM WELLS;

ELECTRON MOBILITY; ELECTRONIC STRUCTURE; GERMANIUM; LANDFORMS; OPTICAL GAIN; QUANTUM WELL LASERS; SEMICONDUCTOR DEVICE STRUCTURES; SILICON; TENSILE STRAIN; TIN;

SEMICONDUCTOR QUANTUM WELLS;

EID: 77951590278 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3329424 Document Type: Article

Times cited : (46)

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