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Advanced Materials

Volumn 25, Issue 7, 2013, Pages 1004-1009

Ion-irradiation-induced defects in isotopically-labeled two layered graphene: Enhanced in-situ annealing of the damage

(4) Kalbac, Martin a Lehtinen, Ossi b Krasheninnikov, Arkady V b,c Keinonen, Juhani b

a J HEYROVSKÝ INSTITUTE OF PHYSICAL CHEMISTRY (Czech Republic)

b UNIVERSITY OF HELSINKI (Finland)

c AALTO UNIVERSITY (Finland)

Author keywords

defects; graphene; raman spectroscopy

Indexed keywords

BI-LAYER; BINARY COLLISION MODELS; IN-SITU ANNEALING; SELF-ANNEALING; UPPER LAYER;

GRAPHENE; RAMAN SPECTROSCOPY;

DEFECTS;

ARGON; CARBON; GRAPHITE; ION; SILICON DIOXIDE;

ARTICLE; CHEMISTRY; ISOTOPE LABELING; RAMAN SPECTROMETRY;

ARGON; CARBON ISOTOPES; GRAPHITE; IONS; ISOTOPE LABELING; SILICON DIOXIDE; SPECTRUM ANALYSIS, RAMAN;

EID: 84874032245 PISSN: 09359648 EISSN: 15214095 Source Type: Journal
DOI: 10.1002/adma.201203807 Document Type: Article

Times cited : (89)

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