Correlation between structure and electrical transport in ion-irradiated graphene grown on Cu foils

Applied Physics Letters

Volumn 98, Issue 3, 2011, Pages

  Buchowicz, Grant ^a,b   Stone, Peter R ^a,b   Robinson, Jeremy T ^c   Cress, Cory D ^c   Beeman, Jeffrey W ^a   Dubon, Oscar D ^a,b  

^a LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^b Lawrence Berkeley National Laboratory   (United States)

^c NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CU FOIL; DEFECTS INDUCED; DISORDERED DOMAINS; ELECTRICAL TRANSPORT; FLUENCES; HALL CONCENTRATION; ION FLUENCES; ION IRRADIATION; MOBILITY MEASUREMENTS; ORDERED LAYER; ORDERS OF MAGNITUDE; RAMAN SPECTRA; RESONANT SCATTERERS; SAPPHIRE SUBSTRATES; STRUCTURAL CHANGE;

AMORPHOUS FILMS; CHEMICAL VAPOR DEPOSITION; GRAPHENE; HALL MOBILITY; HOLE CONCENTRATION; HOLE MOBILITY; IONS; RAMAN SPECTROSCOPY; SILICON COMPOUNDS;

GALVANOMAGNETIC EFFECTS;

EID: 79251584360     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3536529     Document Type: Article

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