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Volumn 529, Issue , 2013, Pages 439-443

Effect of N2 flow rate on the properties of CNx thin films prepared by radio frequency plasma enhanced chemical vapor deposition from ethane and nitrogen

Author keywords

Carbon nitride; N incorporation; Photoluminescence; Plasma enhanced chemical vapor deposition

Indexed keywords

FILM POROSITY; HYDROCARBON MIXTURE; N INCORPORATION; NITROGEN INCORPORATION; PHOTOLUMINESCENCE INTENSITIES; PL PROPERTY; RADIO FREQUENCY PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITIONS;

EID: 84873742663     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2012.03.090     Document Type: Conference Paper
Times cited : (8)

References (32)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.