Low temperature synthesis of α-Al2O3 films by high-power plasma-assisted chemical vapour deposition

Journal of Physics D: Applied Physics

Volumn 43, Issue 32, 2010, Pages

  Jiang, Kaiyun ^a   Sarakinos, Kostas ^a,b   Konstantinidis, Stephanos ^a,c   Schneider, Jochen M ^a  

^a RWTH AACHEN UNIVERSITY   (Germany)

^b LINKÖPING UNIVERSITY   (Sweden)

^c UNIVERSITY OF MONS   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOUR DEPOSITION; DEPOSITION CONDITIONS; ELASTIC PROPERTIES; GASPHASE; GROWING FILMS; HIGH-POWER; LOW TEMPERATURE SYNTHESIS; POWER DENSITIES;

ALUMINUM; CHEMICAL VAPOR DEPOSITION; DIAMOND FILMS; LOW TEMPERATURE EFFECTS;

PLASMA DEPOSITION;

EID: 77957011709     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/43/32/325202     Document Type: Article

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