The influence of the lattice relaxation on the optical properties of GaNxAs1-x alloys

Solar Energy

Volumn 90, Issue , 2013, Pages 134-143

  Reshak, A H ^a,b   Charifi, Z ^c   Baaziz, H ^c  

^a UNIVERSITY OF SOUTH BOHEMIA   (Czech Republic)

^b UNIVERSITY MALAYSIA PERLIS   (Malaysia)

^c UNIVERSITY OF M'SILA   (Algeria)

Author keywords

Ab initio calculations; GaNxA1 x alloys; Optical properties; Semiconductivity

Indexed keywords

AB INITIO CALCULATIONS; ABSORPTION CO-EFFICIENT; ATOMIC CONFIGURATION; ATOMIC POSITIONS; DIELECTRIC FUNCTIONS; ELECTRON ENERGY LOSS; EXCHANGE-CORRELATIONS; FULL POTENTIAL LINEARIZED AUGMENTED PLANE WAVE METHOD; GENERALIZED GRADIENT APPROXIMATIONS; HIGH ENERGY; IMAGINARY PARTS; LATTICE RELAXATION; REFLECTIVITY SPECTRA; SEMICONDUCTIVITY; SIGNIFICANT DIFFERENCES; SPECIAL QUASI-RANDOM STRUCTURES; TOTAL ENERGY; VEGARD'S LAW;

ALLOYS; ATOMS; ELECTRONIC PROPERTIES; ENERGY DISSIPATION; GALLIUM NITRIDE; LATTICE CONSTANTS; OPTICAL PROPERTIES;

CERIUM ALLOYS;

ALLOY; ARSENIC; ELECTRON; GALLIUM; OPTICAL PROPERTY; RENEWABLE RESOURCE; SOLAR POWER;

EID: 84873537809     PISSN: 0038092X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solener.2012.12.015     Document Type: Article

References (51)

1. Baaziz H., Charifi Z., Reshak Ali Hussain, Hamad B., Al-Douri Y. Appl. Phys. A 2012, 106:687.
2. Ballaiche L., Wei S.-H., Zunger A. Phys. Rev. B 1996, 54(17):568.
3. Blaha P., Schwarz K., Madsen G.K.H., Kvasnicka D., Luitz J. WIEN2K, an augmented plane wave+local orbitals program for calculating crystal properties, Karlheinz Schwarz 2001, Techn. Universitat, Vienna, Austria.
4. Buyanova I.A., Chen W.M., Pozina G., Bergman J.P., Monemar B., Xin H.P., Tu C.W. Appl. Phys. Lett. 1999, 75:501.
5. Buyanova I.A., Chen W.M., Monemar B. MRS Internet J. Nitride Semicond. Res. 2001, 6:2.
6. Buyanova I.A., Chen W.M., Tu C.W. Semicond. Sci. Technol. 2002, 17:815.
7. Buyanova I.A., Izadifard M., Chen W.M., Polimeni A., Capizzi M., Xin H.P., Tu C.W. Appl. Phys. Lett. 2003, 82:3662.
8. Chtourou R., Bousbih F., Ben Bouzid S., Charfi F.F., Harmand J.C., Ungaro G., Largeau L. Appl. Phys. Lett. 2002, 80:2075.
9. Davis R., Knight J.R. Solar Energy May 1975, 17(2):145.
10. Dufek P., Blaha P., Schwarz K. Phys. Rev. B 1994, 50:7279.
11. Engel E., Vosko S.H. Phys. Rev. B 1993, 47:13164.
12. Erin Christina Young. " GaNAs and GaAsBi: Structural and electronic properties of two resonant state semiconductor alloys" THE UNIVERSITY OF BRITISH COLUMBIA, December 13, 2006 <>. https://circle.ubc.ca/handle/2429/31188?show=full.
13. Erol Eyse Dilute III-V nitride semiconductors and material systems: physics and technology 2008, Springer.
14. Fischer M., Gollub D., Reinhardt M., Kamp M., Forchel A. J. Cryst. Growth 2003, 251:353.
15. Ito S., Dharmadasa I.M., Tolan G.J., Roberts J.S., Hill G., Miura H., Yum J.-H., Pechy P., Liska P., Comte P., Grätzel M. Solar Energy June 2011, 85(6):1220-1225.
16. Khan M.A., Kashyap Arti, Solanki A.K., Nautiyal T., Auluck S. Phys. Rev. B 1993, 48:16974.
17. Kolinko M.I., Kityk I.V., Krochuk A.S. J. Phys. Chem. 1992, 53:1315.
18. Kondow M., Uomi K., Hosomi K., Mozume T. Jpn. J. Appl. Phys. 1994, 33:L1056.
19. Kuroiwa R., Asahi H., Asami K., Kim S.-J., Iwata K., Gouda S. Appl. Phys. Lett. 1998, 73:2630.
20. Lei T., Moustaka T.D., Graham R.J., He Y., Berkowitz S.J. J. Appl. Phys. 1992, 71:4933. and references therein.
21. Leibiger G., Gottschalch V., Rheinlander B., Sik J., Schubertb M. J. Appl. Phys. 2001, 89:4927.
22. Loughin S., French R.H., De Noyer L.K., Ching W.-Y., Xu Y.-N. J. Phys. D: Appl. Phys. 1996, 29:1740.
23. Mascarenhas A., Seong M.J., Yoon S., Verley J.C., Geisz J.F., Hanna M.C. Phys. Rev. B. 2003, 68:233201.
24. Mouillet R., Vaulchier L.A., Deleporte E., Guldner Y., Travers L., Harmand J.C. Solid State Commun. 2003, 126:333.
25. Murnaghan F.D. Proc. Natl. Acad. Sci. USA 1944, 30:244.
26. Neugebauer J., Van de Walle C.G. Phys. Rev. B 1995, 51(10):568.
27. Perdew J.P., Burke S., Ernzerhof M. Phys. Rev. Lett. 1996, 77:3865.
28. Pozina G., Ivanov I., Monemar B., Thordson J.-V., Andersson T.V. J. Appl. Phys. 1998, 84:3830.
29. Qiu Y., Nikishim S.A., Temkim H., Faleev N.N., Kudraivtser Y.A. Appl. Phys. Lett. 1997, 70:3242.
30. Rubio A., Cohen M.L. Phys. Rev. B 1995, 51:4343.
31. Shan W., Yu K.M., Walukiewicz W., Ager J.W., Haller E.E., Ridgway M.C. Appl. Phys. Lett. 1999, 75:1410.
32. Shan W., Walukiwiecz W., Ager J.W., Haller E.E., Geisz J.F., Fiedman D.J., Olson J.M., Kurtz S.R. Phys. Rev. Lett. 1999, 82:1221-1224.
33. Sika J., Schubert M., Leibiger G., Gottschalch V., Wagner G. J. Appl. Phys. 2001, 89:294.
34. Tisch U., Finkman E., Salzman J. Appl. Phys. Lett. 2002, 81:463-465.
35. Tisch U., Finkman E., Salzman J. Appl. Phys. Lett. 2002, 81:463.
36. Tributsch H. Z. Naturforsch. A 1977, 32A:972.
37. Tsuda Y., Mouri H., Yuasa T., Taneya M. Appl. Phys. Lett. 2004, 85:4361.
38. Uesugi K., Morooka N., Suemune I. Appl. Phys. Lett. 1999, 74:1254.
39. Uesugi K., Suemune I., Hasegawa T., Kutagawa T.A., Nakamura T. Appl. Phys. Lett. 2000, 76:1285.
40. Vegard L. Z. Phys. 1921, 5:17.
41. Weast R.C. Handbook of Chemistry and Physics 1981, CRC, Boca Raton.
42. Wei Su.-H., Zunger A. Phys. Rev. Lett. 1996, 76:664.
43. Wei Shu, Xia Zhang, Qi Wang, Yongqing Huang, Xiaomin Ren, Photon. optoelectron. 4244 (SOPO) 2010.
44. Weyers M., Sato M. Appl. Phys. Lett. 1992, 62:1396.
45. Weyers M., Sato M., Ando H. Jpn. J. Appl. Phys. 1992, 31:L853.
46. Wooten F. Optical Properties of Solids 1972, Academic Press, New York and London.
47. Ya M.H., Chen Y.F., Huang Y.S. J. Appl. Phys. 2002, 92:1446.
48. Yang X., Heroux J.B., Jurkanovic M.J., Wang W.I. J. Vac. Sci. Technol. B 1999, 17:1144.
49. Yue Shen, Peng-Fei Lu, Zhong-Yuan Yu, Long Zhao, Han Ye, Yu-Min Liu, Gui-Fang Yuan Commun. Theor. Phys. 2011, 55:693.
50. Zhang Yong., Mascarenhas A., Wang L.-W. Phys. Rev. B. 2005, 71:155201.
51. Zunger A., Wei S.-H., Feireira L.G., Bernard J.E. Phys. Rev. Lett. 1990, 65:353.