Structural and optical properties of GaN1-xAsx grown by metalorganic chemical vapor deposition

Applied Physics Letters

Volumn 85, Issue 19, 2004, Pages 4361-4363

  Tsuda, Yuhzoh ^a   Mouri, Hirokazu ^a   Yuasa, Takayuki ^a   Taneya, Mototaka ^a  

^a SHARP CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; BAND STRUCTURE; CATHODOLUMINESCENCE; GALLIUM NITRIDE; LATTICE CONSTANTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL PROPERTIES; PHASE SEPARATION; X RAY DIFFRACTION ANALYSIS;

BAND GAP; HIGH-RESOLUTION X-RAY DIFFRACTION (HR-XRD); STRUCTURAL PROPERTIES; VALENCE BAND OFFSET;

GALLIUM ALLOYS;

EID: 10844233040     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1819513     Document Type: Conference Paper

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