Complex strain distribution in individual facetted inGaN/GaN nano-columnar heterostructures

Optical Materials Express

Volumn 3, Issue 1, 2013, Pages 47-53

  Bardoux, R ^a   Funato, M ^a,c   Kaneta, A ^a,c   Kawakami, Y ^a,c   Kikuchi, A ^b,c   Kishino, K ^b,c  

^a KYOTO UNIVERSITY   (Japan)

^b SOPHIA UNIVERSITY   (Japan)

^c JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE LAYER; FABRICATION METHOD; INGAN/GAN; LINEAR POLARIZATION; LOCAL STRAINS; LOCALIZATION CENTERS; NANO SCALE; NANO-DEVICES; NANO-OBJECTS; PRECISE POSITIONING; PYRAMIDAL SHAPE; QUANTUM DISKS; SELECTIVE AREA GROWTH TECHNIQUES; STRAIN DISTRIBUTIONS;

ELECTRICAL ENGINEERING; MAGNETIC MATERIALS;

OPTICAL PROPERTIES;

EID: 84873481735     PISSN: None     EISSN: 21593930     Source Type: Journal    
DOI: 10.1364/OME.3.000047     Document Type: Article

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