Strain relaxation of AlN epilayers for Stranski-Krastanov GaN/AlN quantum dots grown by metal organic vapor phase epitaxy

Journal of Crystal Growth

Volumn 299, Issue 2, 2007, Pages 254-258

  Simeonov, D ^a   Feltin, E ^a   Demangeot, F ^b   Pinquier, C ^b   Carlin, J F ^a   Butte R ^a   Frandon, J ^b   Grandjean, N ^a  

^a EPFL   (Switzerland)

^b UNIVERSITÉ DE TOULOUSE   (France)

Author keywords

A1. Nanostructures; A1. Strain relaxation; A3. MOVPE; A3. Quantum dots; B1. AlN; B1. GaN; B1. Nitrides

Indexed keywords

ALUMINUM NITRIDE; GALLIUM NITRIDE; METALLORGANIC VAPOR PHASE EPITAXY; NANOSTRUCTURED MATERIALS; PHOTOLUMINESCENCE; STRAIN RATE;

ELASTIC ENERGY; STRAIN RELAXATION; STRANSKI-KRASTANOV GROWTH MODE;

SEMICONDUCTOR QUANTUM DOTS;

EID: 33846794449     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.12.005     Document Type: Article

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