The effect of cupric ion concentration on the nucleation and growth of copper on RuTa seeded substrates

Electrochimica Acta

Volumn 92, Issue , 2013, Pages 474-483

  Nagar, M ^a,b   Radisic, A ^a   Strubbe, K ^b   Vereecken, P M ^a,c  

^a IMEC   (Belgium)

^b GHENT UNIVERSITY   (Belgium)

^c UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

Coalescence thickness; Copper concentration; Copper deposition; Copper plating; Direct plating; Nucleation and growth

Indexed keywords

ACID COPPER SULFATE; COPPER CONCENTRATION; COPPER DEPOSITION; COPPER NUCLEATION; CUPRIC IONS; DEPOSITION CURRENT DENSITY; DIRECT PLATING; ELECTROCHEMICAL NUCLEATION; GALVANOSTATIC DEPOSITION; INTERCONNECT METALLIZATION; ISLAND DENSITY; NUCLEATION AND GROWTH; OVERPOTENTIAL; SEEDED SUBSTRATES; SMALL FEATURES;

COALESCENCE; COPPER PLATING; RUTHENIUM ALLOYS;

COPPER;

EID: 84873430579     PISSN: 00134686     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.electacta.2013.01.037     Document Type: Article

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