Evaluation of metallization options for advanced Cu interconnects application

ECS Transactions

Volumn 34, Issue 1, 2011, Pages 515-521

  Jourdan, N ^a   Carbonell, L ^a   Heylen, N ^a   Swerts, J ^a   Armini, S ^a   Maestre Caro, A ^a   Demuynck, S ^a   Croes, K ^a   Beyer, G ^a   Tokei Z ^a   Van Elshocht, S ^a   Vancoille, E ^a  

^a IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER EFFICIENCY; CU DIFFUSION BARRIER; CU INTERCONNECT; CU-INTERCONNECT TECHNOLOGY; CU-INTERCONNECTS; ELECTROMIGRATION RELIABILITY; POSSIBLE SOLUTIONS; PROCESS FLOWS; SEED ENHANCEMENT;

DIFFUSION BARRIERS; MANGANESE COMPOUNDS; RUTHENIUM ALLOYS; SELF ASSEMBLED MONOLAYERS; SEMICONDUCTOR DEVICE MANUFACTURE; TECHNOLOGY;

COPPER;

EID: 79959683202     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.3567629     Document Type: Conference Paper

References (6)

1. G. Schindler et al., Advanced Metallization Conference - AMC, (2002).
2. M. Lane et al., Appl. Phys. Lett. 83(12), 2330 (2003).
3. J. Swerts et al., AVS 57th International Symposium & Exhibition, (2010).
4. H. Volders et al., Advanced Metallization Conference - AMC, (2008).
5. L. Zhao et al., 47th Annual IEEE International Reliability Physics Symposium - IRPS (2009).
6. A. Maestre Caro et al., Microelectronic Engineering 85 2047-2050, (2008).