Electrochemical nucleation and growth of copper on resistive substrates

ECS Transactions

Volumn 11, Issue 28, 2007, Pages 25-33

  Radisic, A ^a   Boelen, P ^b   Rosenfeld, A ^b   Hernandez, J L ^a   Beyer, G P ^a   Vereecken, P M ^a  

^a IMEC   (Belgium)

^b APPLIED MATERIALS INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ADDITIVES; COPPER; CRYSTALLIZATION; ELECTRODEPOSITION; ELECTRODES; NUCLEATION; RUTHENIUM;

DEPOSITION PARAMETERS; ELECTROCHEMICAL NUCLEATION; EXPERIMENTAL PARAMETERS; GALVANOSTATIC DEPOSITION; GALVANOSTATIC METHODS; POTENTIAL-TIME; RESISTIVE SUBSTRATES; SUBSTRATE PRETREATMENT;

SUBSTRATES;

EID: 57749191235     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2931339     Document Type: Conference Paper

References (10)

1. A. Radisic, Y. Cao, P. Taephaisitphongse, A. C. West, and P. C. Searson, 150, C362 (2003).
2. B. R. Scharifker, G. J. Hills, Electrochimica Acta, 28, 879 (1983).
3. Marlon L. Walker, Lee J. Richter, Daniel Josell, and Thomas P. Moffat, J. Electrochemical Soc., 153, C235 (2006).
4. T. P. Moffat, M. Walker, P. J. Chen, J. E. Bonevich, W. F. Egelhoff, L. Richter, C. Witt, T. Aaltonen, M. Ritala, M. Leskelä, and D. Josell, J. Electrochemical Soc., 153, C37 (2006).
5. J.G. Long, P.C. Searson and P.M. Vereecken, J. Electrochem. Soc. 153, C258 (2006).
6. L. Guo, A. Radisic, and P. C. Searson, J. Electrochem. Soc., 153, C840 (2006).
7. Andricacos et al., US Patent No: 6,974,531 B2.
8. Vereecken et al., US Patent No: US2006/0163055 A1.
9. S. G. Malhotra et al. "Integration of Direct Plating of Cu onto a CVD Ru liner", in Advanced Metallization Conference 2004 MRS, Proceedings of the conference held October 19-21, 2004, in San Diego, California, p. 525.
10. R. Fang et al. in Electrochemical Processing in ULSI Fabrication 1/2004, H. Deligianni, S. T. Mayer, T. P. Moffat, and G. R. Stafford, Editors, PV 2004-17, p. 193, The Electrochemical Society Proceedings Series, Pennington, NJ (2005).