White electroluminescence from ZnO nanorods/p-GaN heterojunction light-emitting diodes under reverse bias

Journal of Optics (United Kingdom)

Volumn 15, Issue 2, 2013, Pages

  Zhang, Lichun ^a,b   Li, Qingshan ^a,b   Qu, Chong ^a   Zhang, Zhongjun ^a   Huang, Ruizhi ^a   Zhao, Fengzhou ^a  

^a LUDONG UNIVERSITY   (China)

^b QUFU NORMAL UNIVERSITY   (China)

Author keywords

chromaticity coordinates; electroluminescence; light emitting diodes; ZnO nanorods

Indexed keywords

DIODES; GALLIUM NITRIDE; HETEROJUNCTIONS; II-VI SEMICONDUCTORS; III-V SEMICONDUCTORS; INTERFACE STATES; LIGHT; LIGHT EMITTING DIODES; NANORODS; OXIDE MINERALS; ZINC OXIDE;

ACCEPTOR LEVELS; BAND-EDGE EMISSIONS; CHROMATICITY COORDINATES; HYDROTHERMAL METHODS; REVERSE BIAS; TUNNELING EFFECTS; ULTRA-VIOLET; ZNO NANOROD;

ELECTROLUMINESCENCE;

EID: 84873328524     PISSN: 20408978     EISSN: 20408986     Source Type: Journal    
DOI: 10.1088/2040-8978/15/2/025003     Document Type: Article

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