Near-ultraviolet light-emitting devices using vertical ZnO nanorod arrays

Journal of Electronic Materials

Volumn 41, Issue 5, 2012, Pages 853-856

  Jha, S ^a   Wang, C D ^a   Luan, C Y ^a   Liu, C P ^a   Bin, H ^a   Kutsay, O ^a   Bello, I ^a   Zapien, J A ^a   Zhang, W J ^a   Lee, S T ^a  

^a CITY UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

Electroluminescence; Heterointerface; Light emitting devices (LEDS); UV light emission; Wide bandgap semiconductors; Zno nanorods

Indexed keywords

EMISSION BANDS; EMISSION PEAKS; EMISSION STABILITY; FABRICATED DEVICE; GAUSSIAN FITTING; HETERO INTERFACES; LIGHT EMITTING DEVICES; LIGHTING DEVICES; MASS PRODUCTION; ORDERS OF MAGNITUDE; P-GAN FILMS; P-N JUNCTION; RECTIFICATION RATIO; REVERSE-SATURATION CURRENTS; STABILITY TESTS; VISIBLE SPECTRA; WAVELENGTH RANGES; WIDE-BAND-GAP SEMICONDUCTOR; ZNO NANOROD; ZNO NANOROD ARRAYS;

CURRENT DENSITY; ELECTRIC PROPERTIES; ELECTRIC RECTIFIERS; ELECTROLUMINESCENCE; FABRICATION; GALLIUM NITRIDE; NANORODS; SEMICONDUCTOR JUNCTIONS; ULTRAVIOLET RADIATION; ZINC OXIDE;

LIGHT EMITTING DIODES;

EID: 84862805891     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-012-1919-7     Document Type: Article

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