Highly transparent ZnO spreading layer for GaN based LED

Physica Status Solidi C: Conferences

Volumn 2, Issue 7, 2005, Pages 2533-2535

  Lim, Jae Hong ^a   Hwang, Dae Kue ^a   Kwon, Min Ki ^a   Park, Il Kyu ^a   Na, Seok In ^a   Park, Seong Ju ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; GALLIUM NITRIDE; INDIUM COMPOUNDS; LIGHT EMITTING DIODES; NITROGEN; TRANSPARENCY; ZINC OXIDE;

CONTACT LAYERS; LIGHT OUTPUT POWER; OPTICAL OUTPUT POWER;

OHMIC CONTACTS;

EID: 27344438908     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200461438     Document Type: Conference Paper

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