Microstructural evidence of Hall mobility anisotropy in c-axis textured Al-doped ZnO

Journal of the American Ceramic Society

Volumn 94, Issue 8, 2011, Pages 2339-2343

  Kinemuchi, Yoshiaki ^a   Nakano, Hiromi ^b   Kaga, Hisashi ^a   Tanaka, Satoshi ^c   Uematsu, Keizo ^c   Watari, Koji ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b TOYOHASHI UNIVERSITY OF TECHNOLOGY   (Japan)

^c NAGAOKA UNIVERSITY OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AL-DOPED ZNO; C-AXIS DIRECTION; CONDUCTIVE DIRECTIONS; ELECTRON TRANSPORT; ENERGY DISPERSIVE X-RAY SPECTROSCOPY; HIGH ELECTRICAL CONDUCTIVITY; HIGH-ANGLE ANNULAR DARK FIELDS; IONIZED IMPURITIES; MICRO-STRUCTURAL; MOBILITY ANISOTROPY; PREFERENTIAL SEGREGATION; ROOM TEMPERATURE; SCANNING TRANSMISSION ELECTRON MICROSCOPY; TILT GRAIN BOUNDARY;

ALUMINUM; ANISOTROPY; ELECTRIC CONDUCTIVITY; ELECTRON ENERGY LOSS SPECTROSCOPY; ENERGY DISPERSIVE SPECTROSCOPY; GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE; HALL MOBILITY; HIGH RESOLUTION ELECTRON MICROSCOPY; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; SEGREGATION (METALLOGRAPHY); TRANSMISSION ELECTRON MICROSCOPY; ZINC OXIDE;

GALVANOMAGNETIC EFFECTS;

EID: 80051545664     PISSN: 00027820     EISSN: 15512916     Source Type: Journal    
DOI: 10.1111/j.1551-2916.2010.04373.x     Document Type: Article

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