Carrier transport through grain boundaries in highly transparent conductive Ga-doped ZnO films

ECS Transactions

Volumn 45, Issue 3, 2012, Pages 401-410

  Yamamoto, T ^a   Song, H ^a   Makino, H ^a   Yamamoto, N ^a  

^a KOCHI UNIVERSITY OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER TRANSPORT; FILM THICKNESS; GALLIUM COMPOUNDS; GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE; HALL MOBILITY; HOLE MOBILITY; II-VI SEMICONDUCTORS; METALLIC FILMS; OXIDE MINERALS; SUBSTRATES; ZINC OXIDE;

COLUMNAR GRAIN; DC ARC DISCHARGE; ELECTRICAL RESISTIVITY DATUM; GLASS SUBSTRATES; GRAIN BOUNDARY SCATTERING; GRAIN SIZE EFFECT; POLYCRYSTALLINE; TRANSPARENT CONDUCTIVE;

NANOSYSTEMS;

EID: 84869060931     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.3700905     Document Type: Conference Paper

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