Evidence for the fourfold-valley confinement electron piezo-effective-mass coefficient in inversion layers of 110 uniaxial-tensile-strained (001) nMOSFETs

IEEE Electron Device Letters

Volumn 33, Issue 6, 2012, Pages 755-757

  Chen, Ming Jer ^a   Lee, Wei Han ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

Band structure; effective mass; mechanical stress; metal oxide semiconductor field effect transistors (MOSFETs); mobility; model; simulation; strain; tunneling

Indexed keywords

BAND STRUCTURE CALCULATION; EFFECTIVE MASS; GATE CURRENT; GATE TUNNELING CURRENTS; LITERATURE DATA; MECHANICAL STRESS; METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR; MOBILITY ENHANCEMENT; N-CHANNEL; NMOSFETS; OUT-OF-PLANE; QUANTUM SIMULATIONS; SIMULATION; UNIAXIAL COMPRESSIVE; UNIAXIAL TENSILE;

BAND STRUCTURE; CARRIER MOBILITY; COMPUTER SIMULATION; ELECTRON TUNNELING; LANDFORMS; MODELS; QUANTUM CHEMISTRY; STRAIN; STRESSES;

MOSFET DEVICES;

EID: 84861656983     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2012.2190579     Document Type: Article

References (20)

1. M. V. Fischetti and S. E. Laux, "Band structure, deformation potentials, and carrier mobility in strained Si, Ge, and SiGe alloys," J. Appl. Phys., vol. 80, no. 4, pp. 2234-2252, Aug. 1996. (Pubitemid 126581450)
2. C. Herring and E. Vogt, "Transport and deformation-potential theory for many-valley semiconductors with anisotropic scattering," Phys. Rev., vol. 101, no. 3, pp. 944-961, Feb. 1956.
3. I. Balslev, "Influence of uniaxial stress on the indirect absorption edge in silicon and germanium," Phys. Rev., vol. 143, no. 2, pp. 636-647, Mar. 1966.
4. C. G. Van deWalle and R. M. Martin, "Theoretical calculations of heterojunction discontinuities in the Si/Ge system," Phys. Rev. B, vol. 34, no. 8, pp. 5621-5634, Oct. 1986.
5. J. C. Hensel, H. Hasegawa, and M. Nakayama, "Cyclotron resonance in uniaxially stressed silicon. II. Nature of the covalent bond," Phys. Rev., vol. 138, no. 1A, pp. A225-A238, Apr. 1965.
6. Y. Kanda and K. Suzuki, "Origin of the shear piezoresistance coefficient π44 of n-type silicon," Phys. Rev. B, vol. 43, no. 8, pp. 6754-6756, Mar. 1991.
7. K. Uchida, T. Krishnamohan, K. C. Saraswat, and Y. Nishi, "Physical mechanisms of electron mobility enhancement in uniaxial stressed MOSFETs and impact of uniaxial stress engineering in ballistic regime," in IEDM Tech. Dig., 2005, pp. 129-132. (Pubitemid 46370808)
8. S. Dhar, E. Ungersböck, H. Kosina, T. Grasser, and S. Selberherr, "Electron mobility model for 110 stressed silicon including strain-dependent mass," IEEE Trans. Nanotechnol., vol. 6, no. 1, pp. 97-100, Jan. 2007. (Pubitemid 46181292)
9. E. Ungersboeck, S. Dhar, G. Karlowatz, V. Sverdlov, H. Kosina, and S. Selberherr, "The effect of general strain on the band structure and electron mobility of silicon," IEEE Trans. Electron Devices, vol. 54, no. 9, pp. 2183-2190, Sep. 2007. (Pubitemid 351485736)
10. V. Sverdlov, Strain-Induced Effects in Advanced MOSFETs. Berlin, Germany: Springer-Verlag, 2011.
11. F. Rochette, M. Cassé, M. Mouis, G. Reimbold, D. Blachier, C. Leroux, B. Guillaumot, and F. Boulanger, "Experimental evidence and extraction of the electron mass variation in uniaxially strained MOSFETs," Solid State Electron., vol. 51, no. 11/12, pp. 1458-1465, Nov./Dec. 2007. (Pubitemid 350138023)
12. W. H. Lee and M. J. Chen, "Gate direct tunneling current in uniaxially compressed strained nMOSFETs: A sensitive measure of electron piezo effective mass," IEEE Trans. Electron Devices, vol. 58, no. 1, pp. 39-45, Jan. 2011.
13. J. S. Lim, X. Yang, T. Nishida, and S. E. Thompson, "Measurement of conduction band deformation potential constants using gate direct tunneling current in n-type metal oxide semiconductor field effect transistors under mechanical stress," Appl. Phys. Lett., vol. 89, no. 7, pp. 073509-1-073509-3, Aug. 2006.
14. C. Y. Hsieh andM. J. Chen, "Measurement of channel stress using gate direct tunneling current in uniaxially stressed nMOSFETs," IEEE Electron Device Lett., vol. 28, no. 9, pp. 818-820, Sep. 2007.
15. M. J. Chen, C. C. Lee, and K. H. Cheng, "Hole effective masses as a booster of self-consistent six-band k · p simulation in inversion layers of pMOSFETs," IEEE Trans. Electron Devices, vol. 58, no. 4, pp. 931-937, Apr. 2011.
16. M. J. Chen, S. C. Chang, S. J. Kuang, C. C. Lee, W. H. Lee, K. H. Cheng, and Y. H. Zhan, "Temperature-dependent remote-Coulomb-limited electron mobility in n+polysilicon ultrathin gate oxide nMOSFETs," IEEE Trans. Electron Devices, vol. 58, no. 4, pp. 1038-1044, Apr. 2011.
17. Y. Sun, S. E. Thompson, and T. Nishida, "Physics of strain effects in semiconductors and metal-oxide-semiconductor field-effect transistors," J. Appl. Phys., vol. 101, no. 10, pp. 104 503-1-104 503-22, May 2007.
18. X. Yang, Y. Choi, T. Nishida, and S. E. Thompson, "Gate direct tunneling currents in uniaxial stressedMOSFETs," in Proc. IEDST, 2007, pp. 149-152.
19. W. Zhao, A. Seabaugh, V. Adams, D. Jovanovic, and B. Winstead, "Opposing dependence of the electron and hole gate currents in SOI MOSFETs under uniaxial strain," IEEE Electron Device Lett., vol. 26, no. 6, pp. 410-412, Jun. 2005. (Pubitemid 40843804)
20. F. Stern, "Self-consistent results for n-type Si inversion layers," Phys. Rev. B, vol. 5, no. 12, pp. 4891-4899, Jun. 1972.