Fabrication and properties of As-doped ZnO films grown on GaAs(0 0 1) substrates by radio frequency (rf) magnetron sputtering

Applied Surface Science

Volumn 221, Issue 1-4, 2004, Pages 32-37

  Lee, Woong ^a   Hwang, Deuk Kyu ^a   Jeong, Min Chang ^a   Lee, Myeongkyu ^a   Oh, Min Seok ^b   Choi, Won Kook ^b   Myoung, Jae Min ^a  

^a Yonsei University   (South Korea)

^b Korea Institute of Science and Technology   (South Korea)

Author keywords

As doping; GaAs; Rf magnetron sputtering; ZnO

Indexed keywords

ATOMIC FORCE MICROSCOPY; CATHODOLUMINESCENCE; ENERGY DISPERSIVE SPECTROSCOPY; FILM GROWTH; MAGNETRON SPUTTERING; MORPHOLOGY; PHOTOLUMINESCENCE; SECONDARY ION MASS SPECTROMETRY; X RAY DIFFRACTION ANALYSIS; ZINC OXIDE;

CRYSTALLINITY; PHOTOLUMINESCENCE SPECTROSCOPY; RADIO FREQUENCY MAGNETRON SPUTTERING;

THIN FILMS;

EID: 0345171414     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(03)00947-4     Document Type: Article

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